Intel 660p (SSDPEKNW010T8X1)

Home Storage Intel 660p

Product Specification

Storage
Drive Capacity : 1.0 TB
Performance
Interface : PCIe 3.0 x4
Random Read Speed : 150,000 IOPS (8 GB SPAN)
Random Write Speed : 220,000 IOPS (8 GB SPAN)
Sequential Read Speed : 1800 MB/s
Sequential Write Speed : 1800 MB/s
Physical
Drive Type : SSD
Form Factor : M.2 2280
SSD Specs
Flash Memory Type : Quad-Level Cell (QLC)
SMART Support : Yes
TRIM Support : Yes
Reliability / Data Integrity
Encryption : 256-Bit AES Hardware Encryption
Endurance (Total Bytes Written) : 200 TB
Mean Time Between Failures (MTBF) : 1.6 Million Hours
Non-Recoverable Read Errors per Bits Read : 15
Electrical
Power Draw
0.1 W (Active)
0.04 W (Standby)
Environmental
Operating Shock : 1000 G
Operating Vibration : 2.17 G
Operating Temperature : 32 to 158°F / 0 to 70°C
Packaging Info
Package Weight : 0.25 lb
Box Dimensions (LxWxH) : 6.3 x 4.75 x 0.85"

Intel 660P Series 1TB PCIe M.2-2280 Internal Solid State Drive

  (2518 Total Review)

Product Features

  • Mfr Part Number: SSDPEKNW010T8X1
  • Form Factor: M.2 22 x 80 millimeter
  • Interface: PCI Express NVMe 3.0 x4
  • Performance: Sequential Read (up to) 1800 MB/s, Random Read (8GB Span): Up to 150,000 IOPS
  • Performance : Sequential Write (up to) 1800 MB/s Random Write (8GB Span): Up to 220,000 IOPS
  • End to End Data Protection ensures integrity of stored data from the computer to the SSD and back. ; Intel Rapid Start Technology allows quick system resumes from the hibernate state. Ye
Amazon
In Stock · Last Price Checked At: Oct 16, 2026
$195
Buy
As an Amazon Associate, PC Builder earns from qualifying purchases. Prices and availability are as of the date shown and may change. Affiliate Disclosure

Product Specification

Storage
Drive Capacity : 1.0 TB
Performance
Interface : PCIe 3.0 x4
Random Read Speed : 150,000 IOPS (8 GB SPAN)
Random Write Speed : 220,000 IOPS (8 GB SPAN)
Sequential Read Speed : 1800 MB/s
Sequential Write Speed : 1800 MB/s
Physical
Drive Type : SSD
Form Factor : M.2 2280
SSD Specs
Flash Memory Type : Quad-Level Cell (QLC)
SMART Support : Yes
TRIM Support : Yes
Reliability / Data Integrity
Encryption : 256-Bit AES Hardware Encryption
Endurance (Total Bytes Written) : 200 TB
Mean Time Between Failures (MTBF) : 1.6 Million Hours
Non-Recoverable Read Errors per Bits Read : 15
Electrical
Power Draw
0.1 W (Active)
0.04 W (Standby)
Environmental
Operating Shock : 1000 G
Operating Vibration : 2.17 G
Operating Temperature : 32 to 158°F / 0 to 70°C
Packaging Info
Package Weight : 0.25 lb
Box Dimensions (LxWxH) : 6.3 x 4.75 x 0.85"